On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical Review)

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dc.creatorBarhdadi, A.
dc.date2006-08-29
dc.date.accessioned2026-07-07T07:19:51Z
dc.date.available2026-07-07T07:19:51Z
dc.descriptionMercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides an overview of this technique, with the emphasis on its potential in low temperature elaboration of nano-crystalline silicon for the development of thin films photovoltaic technology. Keywords: Photovoltaic, Solar Cell, Thin films, Nano-Crystalline Silicon, Hydrogenated Amorphous Silicon, Hydrogen Dilution, Low Temperature Growth, Photo-Chemical Vapor Deposition.
dc.description26 pages, 8 figures, 131 references, Topical Review
dc.identifierhttps://arxiv.org/abs/cond-mat/0608644
dc.identifierhttp://arxiv.org/abs/cond-mat/0608644
dc.identifierScience Echoes Magazine, 4, 2006, pp. 27 - 53
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/114780
dc.subjectMaterials Science
dc.titleOn the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical Review)
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