Modelling the onset of oxide formation on metal surfaces from first principles

dc.creatorCiacchi, Lucio Colombi
dc.date2008-07-22
dc.date.accessioned2026-07-07T09:52:05Z
dc.date.available2026-07-07T09:52:05Z
dc.descriptionThe formation of ultrathin oxide layers on metal surfaces is a non-thermally-activated process which takes place spontaneously at very low temperatures within nanoseconds. This paper reports mechanistic details of the initial oxidation of bare metal surfaces, in particular Al(111) and TiN(001), as obtained by means of first-principles molecular dynamics modelling within the Density-Functional Theory. It is shown that the reactions of bare metal surfaces with O2 molecules take place according to a 'hot-atom' dissociative mechanism which is triggered by the filling of the sigma-star antibonding molecular orbital and is characterised by a sudden release of a large amount of kinetic energy. This released energy provides a driving force for metal/oxygen place-exchange processes which are responsible for the onset of oxide formation at virtually 0 K and at oxygen coverages well below 1 monolayer (ML). Further simulations of the oxidation reactions reveal that a disordered ultrathin oxide forms on Al(111), whereas a rather ordered structure develops on TiN(001) following a selective oxidation process which leaves clusters of Ti vacancies in the TiN lattice underneath the oxide layer.
dc.identifierhttps://arxiv.org/abs/0807.3430
dc.identifierhttp://arxiv.org/abs/0807.3430
dc.identifierInternational Journal of Materials Research 98 (2007) 708-716
dc.identifierdoi:10.3139/146.101532
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/165466
dc.subjectMaterials Science
dc.titleModelling the onset of oxide formation on metal surfaces from first principles
dc.typetext

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