Intrinsic Response of Graphene Vapor Sensors

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dc.creatorDan, Yaping
dc.creatorLu, Ye
dc.creatorKybert, Nicholas J.
dc.creatorJohnson, A. T. Charlie
dc.date2008-11-19
dc.date.accessioned2026-07-07T13:01:04Z
dc.date.available2026-07-07T13:01:04Z
dc.descriptionGraphene is a purely two-dimensional material that has extremely favorable chemical sensor properties. It is known, however, that conventional nanolithographic processing typically leaves a resist residue on the graphene surface, whose impact on the sensor characteristics of the system has not yet been determined. Here we show that the contamination layer both degrades the electronic properties of the graphene and masks graphene s intrinsic sensor responses. The contamination layer chemically dopes the graphene, enhances carrier scattering, and acts as an absorbent layer that concentrates analyte molecules at the graphene surface, thereby enhancing the sensor response. We demonstrate a cleaning process that verifiably removes the contamination on the device structure and allows the intrinsic chemical responses of graphene to be measured.
dc.description9 pages and 2 figures
dc.identifierhttps://arxiv.org/abs/0811.3091
dc.identifierhttp://arxiv.org/abs/0811.3091
dc.identifierNano Lett., 2009, 9 (4), pp 1472 - 1475
dc.identifierdoi:10.1021/nl8033637
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/226041
dc.subjectMaterials Science
dc.titleIntrinsic Response of Graphene Vapor Sensors
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