Charge Transfer Excitons and the Metal-Insulator Transition in the High Temperature Superconductors

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dc.creatorVermeulen, C.
dc.creatorBarford, W.
dc.creatorGagliano, E. R.
dc.date1994-07-01
dc.date.accessioned2026-07-07T03:07:20Z
dc.date.available2026-07-07T03:07:20Z
dc.descriptionThe effects of the nearest neighbour Coulomb repulsion, V, are considered in the one dimensional copper-oxide chain using the modified Lanczos method. Above a critical value of V we find that charge transfer excitons are the lowest lying energy exitations in the insulating phase. Close to the metal-insulator transition and $V=0$ there is good `particle-hole' symmetry, showing that the mapping from a two band model to a one band model is appropriate. The effect of the nearest neighbour repulsion is to create states in the gap and to pin the Fermi level upon hole doping.
dc.descriptionLatex
dc.identifierhttps://arxiv.org/abs/cond-mat/9407004
dc.identifierhttp://arxiv.org/abs/cond-mat/9407004
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27132
dc.subjectCondensed Matter
dc.titleCharge Transfer Excitons and the Metal-Insulator Transition in the High Temperature Superconductors
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