Model of charge transport in Semi-Insulating Undoped GaAs microstrip detectors
| dc.creator | al, R. Bates et | |
| dc.date | 1995-09-29 | |
| dc.date.accessioned | 2026-07-07T03:37:10Z | |
| dc.date.available | 2026-07-07T03:37:10Z | |
| dc.description | In this paper we present a method for simulating the response of microstrip detectors to minimum ionizing particles, making use of a program for field calculation, a program for carrier drift and SPICE for circuit response. A knowledge of the electric field is essential for any further improvement of the program. A simple model involving EL2 levels in the metastable state is proposed to explain some measurements of electric field. | |
| dc.description | 11 pages. 9 postscript figures + 1 postscript preprint logo + 1 LaTeX file + 1 non-standard style file. Uses epsfig. Files tarred, gzipped and uuencoded into 1 file. Also available at http://ppewww.ph.gla.ac.uk/preprints/95/05 | |
| dc.identifier | https://arxiv.org/abs/hep-ex/9509011 | |
| dc.identifier | http://arxiv.org/abs/hep-ex/9509011 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/38006 | |
| dc.subject | High Energy Physics - Experiment | |
| dc.title | Model of charge transport in Semi-Insulating Undoped GaAs microstrip detectors | |
| dc.type | text |