Theory of digital magneto resistance in ferromagnetic resonant tunneling diodes

dc.creatorErtler, Christian
dc.creatorFabian, Jaroslav
dc.date2006-12-01
dc.date.accessioned2026-07-07T08:02:09Z
dc.date.available2026-07-07T08:02:09Z
dc.descriptionWe propose a ferromagnetic spintronic system, which consists of two serial connected resonant tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a selfconsistent coherent transport model we show that the current-voltage characteristic of the ferromagnetic diode can be strongly modulated by changing the relative orientation of the magnetizations in the emitter and quantum well, respectively. By a continuous change of the relative magnetization angle the total resistance exhibits a discrete jump realizing digital magneto resistance. The interplay between the emitter's Fermi energy level and the relative magnetization orientations allows to tailor the current voltage characteristics of the ferromagnetic diode from ohmic to negative differential resistance regime at low voltages.
dc.description9 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0612025
dc.identifierhttp://arxiv.org/abs/cond-mat/0612025
dc.identifierPhys. Rev. B 75, 195323 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.195323
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/129142
dc.subjectOther Condensed Matter
dc.subjectMesoscale and Nanoscale Physics
dc.titleTheory of digital magneto resistance in ferromagnetic resonant tunneling diodes
dc.typetext

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