Weak Localization in Semiconductor Multi-Quantum Well Structures

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dc.creatorPikus, F. G.
dc.creatorPikus, G. E.
dc.date1997-10-17
dc.date.accessioned2026-07-07T03:09:16Z
dc.date.available2026-07-07T03:09:16Z
dc.descriptionWe have studied the phenomenon of weak localization in multi-quantum-well (MQW) structures in the regime of weak tunneling, when superlattice minibands are not formed. We have calculated the effect of weak localization on conductivity, which in this situation is described by a system of coupled Dyson equations. The tunneling across the MQW structure is found, in general, to suppress the weak localization effect on conductivity.
dc.description7 pages, 6 PostScript figures. Uses epsf.sty
dc.identifierhttps://arxiv.org/abs/cond-mat/9710179
dc.identifierhttp://arxiv.org/abs/cond-mat/9710179
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27820
dc.subjectCondensed Matter
dc.titleWeak Localization in Semiconductor Multi-Quantum Well Structures
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