Spin-polarized tunneling through randomly transparent magnetic junctions: Reentrant magnetoresistance approaching the Julliere limit

dc.creatorTkachov, Grigory
dc.creatorRichter, Klaus
dc.date2008-03-24
dc.date2008-04-28
dc.date.accessioned2026-07-07T09:40:35Z
dc.date.available2026-07-07T09:40:35Z
dc.descriptionElectron conductance in planar magnetic tunnel junctions with long-range barrier disorder is studied within Glauber-eikonal approximation enabling exact disorder ensemble averaging by means of the Holtsmark-Markov method. This allows us to address a hitherto unexplored regime of the tunneling magnetoresistance effect characterized by the crossover from momentum-conserving to random tunneling as a function of the defect concentration. We demonstrate that such a crossover results in a reentrant magnetoresistance: It goes through a pronounced minimum before reaching disorder- and geometry-independent Julliere's value at high defect concentrations.
dc.description7 pages, 5 figures, derivation of Eq. (39) added, errors in Ref. 7 corrected
dc.identifierhttps://arxiv.org/abs/0803.3427
dc.identifierhttp://arxiv.org/abs/0803.3427
dc.identifierPhys. Rev. B 77, 184427 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.184427
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/161532
dc.subjectMesoscale and Nanoscale Physics
dc.subjectDisordered Systems and Neural Networks
dc.titleSpin-polarized tunneling through randomly transparent magnetic junctions: Reentrant magnetoresistance approaching the Julliere limit
dc.typetext

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