High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities

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dc.creatorLin, Yu-Ming
dc.creatorAppenzeller, Joerg
dc.creatorKnoch, Joachim
dc.creatorAvouris, Phaedon
dc.date2005-01-28
dc.date.accessioned2026-07-07T08:49:43Z
dc.date.available2026-07-07T08:49:43Z
dc.descriptionState-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance, enhancement-mode CNFETs exhibiting n or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S =63 mV/dec). The device design allows for aggressive oxide thickness and gate length scaling while maintaining the desired device characteristics.
dc.description26 pages, 12 figures, accepted for IEEE Trans. Nanotechnology
dc.identifierhttps://arxiv.org/abs/cond-mat/0501690
dc.identifierhttp://arxiv.org/abs/cond-mat/0501690
dc.identifierIEEE Trans. Nanotechnology Vol. 4 (5), pp.481--489, 2005
dc.identifierdoi:10.1109/TNANO.2005.851427
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/144405
dc.subjectMaterials Science
dc.titleHigh-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
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