Tunable stress and controlled thickness modification in graphene by annealing

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dc.creatorNi, Zhen Hua
dc.creatorWang, Hao Min
dc.creatorMa, Yun
dc.creatorKasim, Johnson
dc.creatorWu, Yi Hong
dc.creatorShen, Ze Xiang
dc.date2008-05-07
dc.date.accessioned2026-07-07T09:42:20Z
dc.date.available2026-07-07T09:42:20Z
dc.descriptionGraphene has many unique properties which make it an attractive material for fundamental study as well as for potential applications. In this paper, we report the first experimental study of process-induced defects and stress in graphene using Raman spectroscopy and imaging. While defects lead to the observation of defect-related Raman bands, stress causes shift in phonon frequency. A compressive stress (as high as 2.1 GPa) was induced in graphene by depositing a 5 nm SiO2 followed by annealing, whereas a tensile stress (~ 0.7 GPa) was obtained by depositing a thin silicon capping layer. In the former case, both the magnitude of the compressive stress and number of graphene layers can be controlled or modified by the annealing temperature. As both the stress and thickness affect the physical properties of graphene, this study may open up the possibility of utilizing thickness and stress engineering to improve the performance of graphene-based devices. Local heating techniques may be used to either induce the stress or reduce the thickness selectively.
dc.description19 pages, 7 figures, accepted by ACS nano
dc.identifierhttps://arxiv.org/abs/0805.0921
dc.identifierhttp://arxiv.org/abs/0805.0921
dc.identifierACS NaNo 2,1033 (2008)
dc.identifierdoi:10.1021/nn800031m
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/162149
dc.subjectMaterials Science
dc.titleTunable stress and controlled thickness modification in graphene by annealing
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