Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

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dc.creatorMalard, L. M.
dc.creatorElias, D. C.
dc.creatorAlves, E. S.
dc.creatorPimenta, M. A.
dc.date2008-08-18
dc.date.accessioned2026-07-07T12:12:36Z
dc.date.available2026-07-07T12:12:36Z
dc.descriptionA Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0808.2452
dc.identifierhttp://arxiv.org/abs/0808.2452
dc.identifierPhys. Rev. Lett. 101, 257401 (2008)
dc.identifierdoi:10.1103/PhysRevLett.101.257401
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/210598
dc.subjectMesoscale and Nanoscale Physics
dc.titleObservation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
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