Single-parameter quantized charge pumping in high magnetic fields

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dc.creatorKaestner, B.
dc.creatorLeicht, Ch.
dc.creatorKashcheyevs, V.
dc.creatorPierz, K.
dc.creatorSiegner, U.
dc.creatorSchumacher, H. W.
dc.date2008-11-07
dc.date.accessioned2026-07-07T12:31:52Z
dc.date.available2026-07-07T12:31:52Z
dc.descriptionWe study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected.
dc.descriptionThis article has been submitted to Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/0811.1121
dc.identifierhttp://arxiv.org/abs/0811.1121
dc.identifierAppl. Phys. Lett. 94, 012106 (2009)
dc.identifierdoi:10.1063/1.3063128
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/216597
dc.subjectMesoscale and Nanoscale Physics
dc.titleSingle-parameter quantized charge pumping in high magnetic fields
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