Carrier-carrier entanglement and transport resonances in semiconductor quantum dots

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dc.creatorBuscemi, Fabrizio
dc.creatorBordone, Paolo
dc.creatorBertoni, Andrea
dc.date2007-06-15
dc.date.accessioned2026-07-07T09:20:21Z
dc.date.available2026-07-07T09:20:21Z
dc.descriptionWe study theoretically the entanglement created in a scattering between an electron, incoming from a source lead, and another electron bound in the ground state of a quantum dot, connected to two leads. We analyze the role played by the different kinds of resonances in the transmission spectra and by the number of scattering channels, into the amount of quantum correlations between the two identical carriers. It is shown that the entanglement between their energy states is not sensitive to the presence of Breit-Wigner resonances, while it presents a peculiar behavior in correspondence of Fano peaks: two close maxima separated by a minimum, for a two-channel scattering, a single maximum for a multi-channel scattering. Such a behavior is ascribed to the different mechanisms characterizing the two types of resonances. Our results suggest that the production and detection of entanglement in quantum dot structures may be controlled by the manipulation of Fano resonances through external fields.
dc.description8 pages, 6 figures, RevTex4 two-column format, submitted
dc.identifierhttps://arxiv.org/abs/0706.2312
dc.identifierhttp://arxiv.org/abs/0706.2312
dc.identifierPhys. Rev. B 76, 195317 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.195317
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/154697
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleCarrier-carrier entanglement and transport resonances in semiconductor quantum dots
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