Interface hole-doping in cuprate-titanate superlattices

dc.creatorPavlenko, N.
dc.creatorElfimov, I.
dc.creatorKopp, T.
dc.creatorSawatzky, G. A.
dc.date2006-05-24
dc.date2006-12-26
dc.date.accessioned2026-07-07T07:58:03Z
dc.date.available2026-07-07T07:58:03Z
dc.descriptionThe electronic structure of interfaces between YBa$_2$Cu$_3$O$_6$ and SrTiO$_3$ is studied using local spin density approximation (LSDA) with intra-atomic Coulomb repulsion (LSDA+U). We find a metallic state in cuprate/titanate heterostructures with the hole carriers concentrated substantially in the CuO$_2$-layers and in the first interface TiO$_2$ and SrO planes. This effective interface doping appears due to the polarity of interfaces, caused by the first incomplete copper oxide unit cell. Interface-induced high pre-doping of CuO$_2$-layers is a key mechanism controlling the superconducting properties in engineered field-effect devices realized on the basis of cuprate/titanate superlattices.
dc.description5 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0605589
dc.identifierhttp://arxiv.org/abs/cond-mat/0605589
dc.identifierPhysical Review B (Rapid Communications) 75, 140512(R) (2007)
dc.identifierdoi:10.1103/PhysRevB.75.140512
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/127868
dc.subjectStrongly Correlated Electrons
dc.subjectSuperconductivity
dc.titleInterface hole-doping in cuprate-titanate superlattices
dc.typetext

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