Electron spin interferometry using a semiconductor ring structure

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dc.creatorKato, Y. K.
dc.creatorMyers, R. C.
dc.creatorGossard, A. C.
dc.creatorAwschalom, D. D.
dc.date2005-01-13
dc.date.accessioned2026-07-07T06:17:57Z
dc.date.available2026-07-07T06:17:57Z
dc.descriptionA ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive transport regime. Optical pumping with circularly polarized light on one arm establishes dynamic nuclear polarization which acts as a local effective magnetic field on electron spins due to the hyperfine interaction. This local field causes one spin packet to precess faster than the other, thereby controlling the spin interference when the two packets are combined.
dc.description4 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0501306
dc.identifierhttp://arxiv.org/abs/cond-mat/0501306
dc.identifierAppl. Phys. Lett. 86, 162107 (2005)
dc.identifierdoi:10.1063/1.1906301
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/94570
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleElectron spin interferometry using a semiconductor ring structure
dc.typetext

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