Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure alculations; surface reconstruction, step and bending

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dc.creatorHoshi, Takeo
dc.creatorIguchi, Yusuke
dc.creatorFujiwara, Takeo
dc.date2004-09-07
dc.date2005-03-16
dc.date.accessioned2026-07-07T03:00:22Z
dc.date.available2026-07-07T03:00:22Z
dc.descriptionThe 10-nm-scale structure in silicon cleavage is studied by the quantum mechanical calculations for large-scale electronic structure. The cleavage process on the order of 10 ps shows surface reconstruction and step formation. These processes are studied by analyzing electronic freedom and compared with STM experiments. The discussion presents the stability mechanism of the experimentally observed mode, the $(111)$-$(2 x 1)$ mode, beyond the traditional approach with surface energy. Moreover, in several results, the cleavage path is bent into the experimentally observed planes, owing to the relative stability among different cleavage modes. Finally, several common aspects between cleavage and other phenomena are discussed from the viewpoints of the nonequilibrium process and the 10-nm-scale structure.
dc.description11 pages, 10 figures. A (heavier) PDF file with a better graphics is available at http://fujimac.t.u-tokyo.ac.jp/hoshi/
dc.identifierhttps://arxiv.org/abs/cond-mat/0409142
dc.identifierhttp://arxiv.org/abs/cond-mat/0409142
dc.identifierPhys. Rev. B 72, 075323 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.075323
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24799
dc.subjectMaterials Science
dc.titleNanoscale structures formed in silicon cleavage studied with large-scale electronic structure alculations; surface reconstruction, step and bending
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