Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
| dc.creator | Berger, Claire | |
| dc.creator | Song, Zhimin | |
| dc.creator | Li, Tianbo | |
| dc.creator | Li, Xuebin | |
| dc.creator | Ogbazghi, Asmerom Y. | |
| dc.creator | Feng, Rui | |
| dc.creator | Dai, Zhenting | |
| dc.creator | Marchenkov, Alexei N. | |
| dc.creator | Conrad, Edward H. | |
| dc.creator | First, Phillip N. | |
| dc.creator | de Heer, Walt A. | |
| dc.date | 2004-10-10 | |
| dc.date.accessioned | 2026-07-07T03:01:23Z | |
| dc.date.available | 2026-07-07T03:01:23Z | |
| dc.description | We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-ordered sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration. | |
| dc.description | 5 pages, figure files: figure1.eps, figure2a.eps, figure2b.eps, figure3.eps | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0410240 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0410240 | |
| dc.identifier | J. Phys. Chem., vol. 108, pp. 19912-16 (2004) | |
| dc.identifier | doi:10.1021/jp040650f | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/25039 | |
| dc.subject | Materials Science | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics | |
| dc.type | text |