Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states
| dc.creator | Mikhailov, S. A. | |
| dc.date | 2003-03-07 | |
| dc.date.accessioned | 2026-07-07T02:50:03Z | |
| dc.date.available | 2026-07-07T02:50:03Z | |
| dc.description | We discuss a possible origin of the recently discovered microwave-induced zero-resistance states in very-high-electron-mobility two-dimensional electron systems. We suggest a scenario, in which two mechanisms, bulk and edge, contribute to the measured photosignal. Zero-resistance states are assumed to be due to a drift plasma instability, developing {\em near the edge} of the system under the microwave radiation. The proposed scheme qualitatively agrees with the microwave power, temperature, frequency, magnetic field, and mobility dependencies of the measured photosignal. | |
| dc.description | 4 pages, incl 2 figs. RevTex | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0303130 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0303130 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/20986 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Drift plasma instability near the edge as the origin of the microwave-induced zero-resistance states | |
| dc.type | text |