On the calculation of Schottky contact resistivity

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dc.creatorLiu, Yang
dc.date2008-02-06
dc.date.accessioned2026-07-07T09:18:58Z
dc.date.available2026-07-07T09:18:58Z
dc.descriptionThis numerical study examines the importance of self-consistently accounting for transport and electrostatics in the calculaiton of semiconductor/metal Schottky contact resistivity. It is shown that ignoring such self-consistency results in significant under-estimation of the contact resistivity. An explicit numerical method has also been proposed to efficiently improve contact resistivity calculations.
dc.identifierhttps://arxiv.org/abs/0802.0729
dc.identifierhttp://arxiv.org/abs/0802.0729
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/154223
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleOn the calculation of Schottky contact resistivity
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