Orientational pinning of quantum Hall striped phase

dc.creatorTakhtamirov, E. E.
dc.creatorVolkov, V. A.
dc.date2000-06-14
dc.date.accessioned2026-07-07T02:37:55Z
dc.date.available2026-07-07T02:37:55Z
dc.descriptionIn ultra-clean 2D electron systems on (001) GaAs/AlGaAs upon filling high Landau levels, it was recently observed a new class of collective states, which can be related to the spontaneous formation of a charge density wave (``striped phase''). We address to the following unsolved problem: what is the reason for stripe pinning along the crystallographic direction [110]? It is shown that in a single heterojunction (001) III-V the effective mass of 2D electrons is anisotropic. This natural anisotropy is due to the reduced (C_{2v}) symmetry of the heterojunction and, even being weak (0.1 percent), can govern the stripe direction. A magnetic field parallel to the interface induces ``magnetic'' anisotropy of the effective mass. The competition of these two types of anisotropy provides quantitative description of the experiment.
dc.description4 pages, LaTeX
dc.identifierhttps://arxiv.org/abs/cond-mat/0006226
dc.identifierhttp://arxiv.org/abs/cond-mat/0006226
dc.identifierPis'ma v Zh. Eksp. Teor. Fiz. 71 (2000) 612-617 [JETP Letters 71 (2000) 422-425]
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16475
dc.subjectMesoscale and Nanoscale Physics
dc.titleOrientational pinning of quantum Hall striped phase
dc.typetext

Files

Collections