Atom lithography with two-dimensional optical masks

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dc.creatorPetra, S. J. H.
dc.creatorvan Leeuwen, K. A. H.
dc.creatorFeenstra, L.
dc.creatorHogervorst, W.
dc.creatorVassen, W.
dc.date2004-02-26
dc.date2004-02-27
dc.date.accessioned2026-07-07T05:51:24Z
dc.date.available2026-07-07T05:51:24Z
dc.descriptionWith a two-dimensional (2D) optical mask, nanoscale patterns are created for the first time in an atom lithography process using metastable helium atoms. The internal energy of the atoms is used to locally damage a hydrofobic resist layer, which is removed in a wet etching process. Experiments have been performed with several polarizations for the optical mask, resulting in different intensity patterns, and corresponding nanoscale structures. The results for a linear polarized light field show an array of holes with a diameter of 260 nm, in agreement with a computed pattern. With a circularly polarized light field a line pattern is observed with a spacing of 766 nm. Simulations taking into account many possible experimental imperfections can not explain this pattern.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/physics/0402127
dc.identifierhttp://arxiv.org/abs/physics/0402127
dc.identifierAppl. Phys. B 79 (3), 279-283 (2004)
dc.identifierdoi:10.1007/s00340-004-1569-4
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/85975
dc.subjectAtomic Physics
dc.titleAtom lithography with two-dimensional optical masks
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