Few layers graphene on 6H-SiC(000-1): an STM study

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dc.creatorVarchon, François
dc.creatorMallet, Pierre
dc.creatorMagaud, Laurence
dc.creatorVeuillen, Jean-Yves
dc.date2008-01-08
dc.date.accessioned2026-07-07T09:33:55Z
dc.date.available2026-07-07T09:33:55Z
dc.descriptionWe have analyzed by Scanning Tunnelling Microscopy (STM) thin films made of few (3-5) graphene layers grown on the C terminated face of 6H-SiC in order to identify the nature of the azimuthal disorder reported in this material. We observe superstructures which are interpreted as Moiré patterns due to a misorientation angle between consecutive layers. The presence of stacking faults is expected to lead to electronic properties reminiscent of single layer graphene even for multilayer samples. Our results indicate that this apparent electronic decoupling of the layers can show up in STM data.
dc.description20 pages
dc.identifierhttps://arxiv.org/abs/0801.1188
dc.identifierhttp://arxiv.org/abs/0801.1188
dc.identifierPhysical Review B 77 (2008) 165415
dc.identifierdoi:10.1103/PhysRevB.77.165415
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/159301
dc.subjectMaterials Science
dc.titleFew layers graphene on 6H-SiC(000-1): an STM study
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