Lattice Relaxation in Epitaxial BaTiO$_3$ Thin Films

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dc.creatorHe, Feizhou
dc.creatorWells, Barrett O.
dc.date2005-11-21
dc.date.accessioned2026-07-07T06:49:20Z
dc.date.available2026-07-07T06:49:20Z
dc.descriptionWe have investigated the out-of-plane lattice relaxation related to the ferroelectric transitions in epitaxial BaTiO$_3$ (BTO) films using synchrotron X-ray diffraction. Under either compressive strain or tensile strain, there is evidence for two structural phase transitions as a function of temperature. The transition temperature $T_C$ is a strong function of strain, which can be as much as 100 K above the corresponding $T_C$ in bulk. Under compressive strain, the tetragonality of BTO unit cell implies that the polarization of the first ferroelectric phase is out-of-plane, while under tensile strain, the polarization is in-plane. The transitions at lower temperature may correspond to the $aa\to r$ or $c\to r$ transitions, following the notations by Pertsev \textit{et al}. The orientations of the domains are consistent with theoretical predictions.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0511518
dc.identifierhttp://arxiv.org/abs/cond-mat/0511518
dc.identifierAppl. Phys. Lett. 88, 152908 (2006)
dc.identifierdoi:10.1063/1.2194231
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/104303
dc.subjectMaterials Science
dc.titleLattice Relaxation in Epitaxial BaTiO$_3$ Thin Films
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