Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime

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dc.creatorShlimak, I.
dc.creatorGinodman, V.
dc.creatorFriedland, K. -J.
dc.creatorKravchenko, S. V.
dc.date2006-02-16
dc.date.accessioned2026-07-07T07:01:45Z
dc.date.available2026-07-07T07:01:45Z
dc.descriptionWe report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling factor ν=6 directly to the plateau at ν=4, skipping the plateau at ν=5. However, when the filling factor approaches ν=5, the Hall resistance sharply "dives" to the value 1/5(h/e^2) characteristic of the ν=5 plateau, and then returns to 1/4(h/e^2). This is interpreted as a manifestation of the oscillating exchange enhancement of the valley splitting when the Fermi level is in the middle between two adjacent valley-split Landau bands with the asymmetric position of the extended states.
dc.description4 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0602376
dc.identifierhttp://arxiv.org/abs/cond-mat/0602376
dc.identifierPhys. Rev. B 73, 205324 (2006)
dc.identifierdoi:10.1103/PhysRevB.73.205324
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/108373
dc.subjectMesoscale and Nanoscale Physics
dc.titleManifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime
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