Switching of the Mott transition based on the hole-driven MIT theory

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dc.creatorKim, Hyun-Tak
dc.creatorKim, Bong-Jun
dc.creatorLee, Yong Wook
dc.creatorChae, Byung-Gyu
dc.creatorYun, Sun Jin
dc.date2008-04-15
dc.date.accessioned2026-07-07T09:36:21Z
dc.date.available2026-07-07T09:36:21Z
dc.descriptionSwitching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole doping of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the Peierls transition.
dc.description2 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/0804.2314
dc.identifierhttp://arxiv.org/abs/0804.2314
dc.identifierPhysica B 403 (2008) 1434-1436
dc.identifierdoi:10.1016/j.physb.2007.10.188
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160088
dc.subjectStrongly Correlated Electrons
dc.subjectMaterials Science
dc.titleSwitching of the Mott transition based on the hole-driven MIT theory
dc.typetext

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