Correlated Doping in Semiconductors: The Role of Donors in III-V Diluted Magnetic Semiconductors

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dc.creatorMasek, J.
dc.creatorTurek, I.
dc.creatorDrchal, V.
dc.creatorKudrnovsky, J.
dc.creatorMaca, F.
dc.date2003-02-10
dc.date.accessioned2026-07-07T02:49:36Z
dc.date.available2026-07-07T02:49:36Z
dc.descriptionWe investigate the compositional dependence of the total energy of the mixed crystals (Ga,Mn)As co-doped with As, Sn, and Zn. Using the ab initio LMTO-CPA method we find a correlation between the incorporation of acceptors (Mn, Zn) and donors (Sn, antisite As). In particular, the formation energy of As_Ga is reduced by approx. 0.1 eV in the presence of Mn, and vice versa. This leads to the self-compensating behavior of (Ga,Mn)As.
dc.description8 pages, 2 figures, presented at the XXXI Int. School of Semiconducting Compounds, Jaszowiec 2002, Poland
dc.identifierhttps://arxiv.org/abs/cond-mat/0302176
dc.identifierhttp://arxiv.org/abs/cond-mat/0302176
dc.identifierActa Phys. Polon. A 102, 673 (2002)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20863
dc.subjectMaterials Science
dc.titleCorrelated Doping in Semiconductors: The Role of Donors in III-V Diluted Magnetic Semiconductors
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