Vibrational Sidebands and Kondo-effect in Molecular Transistors

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dc.creatorPaaske, Jens
dc.creatorFlensberg, Karsten
dc.date2004-09-07
dc.date.accessioned2026-07-07T06:31:22Z
dc.date.available2026-07-07T06:31:22Z
dc.descriptionElectron transport through molecular quantum dots coupled to a single vibrational mode is studied in the Kondo regime. We apply a generalized Schrieffer-Wolff transformation to determine the effective low-energy spin-spin-vibron-interaction. From this model we calculate the nonlinear conductance and find Kondo sidebands located at bias-voltages equal to multiples of the vibron frequency. Due to selection rules, the side-peaks are found to have strong gate-voltage dependences, which can be tested experimentally. In the limit of weak electron-vibron coupling, we employ a perturbative renormalization group scheme to calculate analytically the nonlinear conductance.
dc.description4 pages
dc.identifierhttps://arxiv.org/abs/cond-mat/0409158
dc.identifierhttp://arxiv.org/abs/cond-mat/0409158
dc.identifierPhys. Rev. Lett. 94, 176801 (2005)
dc.identifierdoi:10.1103/PhysRevLett.94.176801
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/98584
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleVibrational Sidebands and Kondo-effect in Molecular Transistors
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