Control of spin relaxation in semiconductor double quantum dots

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dc.creatorWang, Y. Y.
dc.creatorWu, M. W.
dc.date2006-01-02
dc.date2006-07-13
dc.date.accessioned2026-07-07T06:57:17Z
dc.date.available2026-07-07T06:57:17Z
dc.descriptionWe propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.
dc.description5 pages, 4 figures, to be published in PRB
dc.identifierhttps://arxiv.org/abs/cond-mat/0601028
dc.identifierhttp://arxiv.org/abs/cond-mat/0601028
dc.identifierPhys. Rev. B 74, 165312 (2006).
dc.identifierdoi:10.1103/PhysRevB.74.165312
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/106916
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleControl of spin relaxation in semiconductor double quantum dots
dc.typetext

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