Internal magnetic fields in thin ZnSe epilayers

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dc.creatorGhosh, S.
dc.creatorStern, N. P.
dc.creatorMaertz, B.
dc.creatorAwschalom, D. D.
dc.creatorXiang, G.
dc.creatorZhu, M.
dc.creatorSamarth, N.
dc.date2006-09-24
dc.date.accessioned2026-07-07T07:48:59Z
dc.date.available2026-07-07T07:48:59Z
dc.descriptionStrain induced spin-splitting is observed and characterized using pump-probe Kerr rotation spectroscopy in n-ZnSe epilayers grown on GaAs substrates. The spin-splitting energies are mapped out as a function of pump-probe separation, applied voltage, and temperature in a series of samples of varying epilayer thicknesses and compressive strain arising from epilayer-substrate lattice mismatch. The strain is independently quantified using photoluminescence and x-ray diffraction measurements. We observe that the magnitude of the spin splitting increases with applied voltage and temperature, and is highly crystal direction dependent, vanishing along [1 1-bar 0].
dc.description9 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0609619
dc.identifierhttp://arxiv.org/abs/cond-mat/0609619
dc.identifierAppl. Phys. Lett. 89, 242116 (2006)
dc.identifierdoi:10.1063/1.2404600
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124694
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleInternal magnetic fields in thin ZnSe epilayers
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