Optical characterization of GaN by N+ implantation into GaAs at elevated temperature

Simple item page
dc.creatorDhara, S.
dc.creatorMagudapathy, P.
dc.creatorKesavamoorthy, R.
dc.creatorKalavathi, S.
dc.creatorNair, K. G. M.
dc.creatorHsu, G. M.
dc.creatorChen, L. C.
dc.creatorChen, K. H.
dc.creatorSanthakumar, K.
dc.creatorSoga, T.
dc.date2007-08-16
dc.date.accessioned2026-07-07T08:23:55Z
dc.date.available2026-07-07T08:23:55Z
dc.descriptionBoth hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition peak ~3.32 eV at temperature <= 200K. The intermediate bandgap value, with respect to ~3.4 eV for hexagonal and ~3.27 eV for cubic phases of GaN is an indicative for the formation of mixed hexagonal and cubic phases.
dc.description9 pages, 4 figuresn Journal
dc.identifierhttps://arxiv.org/abs/0708.2211
dc.identifierhttp://arxiv.org/abs/0708.2211
dc.identifierApplied Physics Letters 87 (26) 281915 (2005)
dc.identifierdoi:10.1063/1.2099542
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/136167
dc.subjectMaterials Science
dc.titleOptical characterization of GaN by N+ implantation into GaAs at elevated temperature
dc.typetext

Files

Collections

arXiv