Electronic-Transport Properties of Al-Cu-Fe Thin Films

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dc.creatorHaberkern, R.
dc.creatorRoth, C.
dc.creatorKnoefler, R.
dc.creatorZavaliche, F.
dc.creatorHaeussler, P.
dc.date1999-11-23
dc.date.accessioned2026-07-07T03:15:15Z
dc.date.available2026-07-07T03:15:15Z
dc.descriptionAmorphous samples of Al-Cu-Fe were crystallized to the icosahedral phase under the control of electrical conductivity and thermopower at a rather small temperature of T=720 K. A comparison between different annealing states of the amorphous and the resulting quasicrystalline phase done on the same sample shows aston-ishing parallels in conductivity and large differences in thermopower.
dc.description4 pages, 4 figures, Conf. Proc. ICQ6 (Tokyo, 1997)
dc.identifierhttps://arxiv.org/abs/cond-mat/9911371
dc.identifierhttp://arxiv.org/abs/cond-mat/9911371
dc.identifierProceedings of the 6th Int. Conf. on quasicrystals;eds.: S. Takeuchi, T. Fujiwara; World Scientific (1998), p. 643
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29963
dc.subjectMaterials Science
dc.titleElectronic-Transport Properties of Al-Cu-Fe Thin Films
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