Screening and Fabrication of Half-Heusler phases for thermoelectric applications

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dc.creatorWunderlich, Wilfried
dc.creatorMotoyama, Yuichiro
dc.date2009-01-12
dc.date2009-02-21
dc.date.accessioned2026-07-07T12:44:24Z
dc.date.available2026-07-07T12:44:24Z
dc.descriptionHalf-Heusler phases have gained recently much interest as thermoelectric materials. Screening of possible systems was performed by ab-initio simulation using VASP-software. The energy-versus-Volume (E(V)) curves were calculated and calibrated. For TiCoSb, NbNiSn, FeMoSb the stability of Half-Heusler phase against concurrent crystal structures like TiNiSi, ZrCoAl, ZrBeSi, FeSiV, ZrNiP and Full Heusler was confirmed. However, the thermo-dynamical driving force as calculated from the difference in lattice energies is less than 0.1eV/atom. Hence, the fabrication of Half Heusler phases is a challenge and requires three steps, surface activation of the raw material by ball milling, arc-melting of pressed pellets and finally long-term annealing treatment in a vacuum furnace. On doped TiCoSb specimens, Seebeck coefficients up to 0.1 mV/K, on NiNbSn 0.16 mV/K were measured, although the microstructure was not yet optimized.
dc.description6 pages, 5 figures, 2 tables
dc.identifierhttps://arxiv.org/abs/0901.1491
dc.identifierhttp://arxiv.org/abs/0901.1491
dc.identifierMater. Res. Soc. Symp. Proc. (2009) Vol. 1128-U01-10 pp.1-6
dc.identifierdoi:10.1557/PROC-1128-U01-10
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/220758
dc.subjectMaterials Science
dc.titleScreening and Fabrication of Half-Heusler phases for thermoelectric applications
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