Ab-initio formulation of the 4-point conductance of interacting electronic systems

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dc.creatorBokes, P.
dc.creatorJung, J.
dc.creatorGodby, R. W.
dc.date2007-05-10
dc.date2007-10-04
dc.date.accessioned2026-07-07T08:33:56Z
dc.date.available2026-07-07T08:33:56Z
dc.descriptionWe derive an expression for the 4-point conductance of a general quantum junction in terms of the density response function. Our formulation allows us to show that the 4-point conductance of an interacting electronic system possessing either a geometrical constriction and/or an opaque barrier becomes identical to the macroscopically measurable 2-point conductance. Within time-dependent density-functional theory the formulation leads to a direct identification of the functional form of the exchange-correlation kernel that is important for the conductance. We demonstrate the practical implementationof our formula for a metal-vacuum-metal interface.
dc.identifierhttps://arxiv.org/abs/0705.1568
dc.identifierhttp://arxiv.org/abs/0705.1568
dc.identifierPhys. Rev. B 76, 125433 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.125433
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/139264
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleAb-initio formulation of the 4-point conductance of interacting electronic systems
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