Epitaxial aluminium-nitride tunnel barriers grown by nitridation with a plasma source

Simple item page
dc.creatorZijlstra, T.
dc.creatorLodewijk, C. F. J.
dc.creatorVercruyssen, N.
dc.creatorTichelaar, F. D.
dc.creatorLoudkov, D. N.
dc.creatorKlapwijk, T. M.
dc.date2007-11-14
dc.date.accessioned2026-07-07T09:41:59Z
dc.date.available2026-07-07T09:41:59Z
dc.descriptionHigh critical current-density (10 to 420 kA/cm^2) superconductor-insulator-superconductor tunnel junctions with aluminium nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10^{-3} to 10^{-1} mbar. We find a much better reproducibility and control compared to previous work. From the current-voltage characteristics and cross-sectional TEM images it is inferred that, compared to the commonly used AlO_x barriers, the poly-crystalline AlN barriers are much more uniform in transmissivity, leading to a better quality at high critical current-densities.
dc.description3 pages, 3 figures, accepted for publication in APL
dc.identifierhttps://arxiv.org/abs/0711.2221
dc.identifierhttp://arxiv.org/abs/0711.2221
dc.identifierAppl. Phys. Lett. 91, 233102 (2007)
dc.identifierdoi:10.1063/1.2819532
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/162025
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleEpitaxial aluminium-nitride tunnel barriers grown by nitridation with a plasma source
dc.typetext

Files

Collections

arXiv