Diffusion-free ultrafast carrier dynamics in silicon nano-pillars
| dc.creator | Chekulaev, D. | |
| dc.creator | Kaplan, A. | |
| dc.date | 2009-02-05 | |
| dc.date.accessioned | 2026-07-07T12:38:16Z | |
| dc.date.available | 2026-07-07T12:38:16Z | |
| dc.description | We have investigated ultrafast carriers dynamics in crystalline silicon nano-pillars structure using a pump-probe reflectivity method with 800 nm, 150 fs laser pulses and fluence in the range of {17 - 170} mJ/cm^2. Dimensions of the structure allow us to eliminate contribution from the diffusion process to the relaxation dynamics of the excited carriers. Strong intensity-dependent time-resolved reflectivity change, ΔR(τ_d), was monitored in the submelting regime. At strong pumping ΔR(τ_d) can reach up to 8%, a several times higher than for a bulk silicon. From the measurements we deduced recombination time of up to 10 ns at carriers density of ~1 x 10^20 cm^-3, while electron-phonon interaction occurs during 350-400 fs and it is independent of the concentration. | |
| dc.description | 3 pages, 4 figures | |
| dc.identifier | https://arxiv.org/abs/0902.0939 | |
| dc.identifier | http://arxiv.org/abs/0902.0939 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/218701 | |
| dc.subject | Materials Science | |
| dc.subject | Other Condensed Matter | |
| dc.title | Diffusion-free ultrafast carrier dynamics in silicon nano-pillars | |
| dc.type | text |