Calculations on Electronic States in QDs woth Saturated Shapes

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dc.creatorCheng, Wei
dc.creatorRen, Shang-Fen
dc.date2002-08-20
dc.date.accessioned2026-07-07T02:46:54Z
dc.date.available2026-07-07T02:46:54Z
dc.descriptionElectronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight binding model combined with the irreducible representations of the group theory. The results are compared with those of Si and Ge quantum dots with spherical shape. The effects of the shapes on electronic states in QDs are discussed.
dc.description11 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0208395
dc.identifierhttp://arxiv.org/abs/cond-mat/0208395
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19811
dc.subjectMaterials Science
dc.titleCalculations on Electronic States in QDs woth Saturated Shapes
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