CdZnTe:Cl crystals for X-ray computer tomography detectors
| dc.creator | Matveev, O. A. | |
| dc.creator | Terent'ev, A. I. | |
| dc.creator | Karpenko, V. P. | |
| dc.creator | Zelenina, N. K. | |
| dc.creator | Fauler, A. | |
| dc.creator | Federle, M. | |
| dc.creator | Benz, K. W. | |
| dc.date | 2007-04-18 | |
| dc.date.accessioned | 2026-07-07T07:57:01Z | |
| dc.date.available | 2026-07-07T07:57:01Z | |
| dc.description | Processes of growth of semi-insulating Cd(1-x)Zn(x)Te:Cl crystals (x = 0.0002 and 0.1) of n-type conductivity are investigated. From the grown crystals detectors for X-ray computer tomography with small value of photocurrent memory (afterglow) (0.1-0.3%) are obtained. | |
| dc.description | 3 pages, 2 figures | |
| dc.identifier | https://arxiv.org/abs/0704.2330 | |
| dc.identifier | http://arxiv.org/abs/0704.2330 | |
| dc.identifier | phys. stat. sol. (b) 229, No. 2, 1073-1076 (2002) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/127528 | |
| dc.subject | Materials Science | |
| dc.title | CdZnTe:Cl crystals for X-ray computer tomography detectors | |
| dc.type | text |