Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations

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dc.creatorSchmidt, E. W.
dc.creatorBernhardt, D.
dc.creatorMueller, A.
dc.creatorSchippers, S.
dc.creatorFritzsche, S.
dc.creatorHoffmann, J.
dc.creatorJaroshevich, A. S.
dc.creatorKrantz, C.
dc.creatorLestinsky, M.
dc.creatorOrlov, D. A.
dc.creatorWolf, A.
dc.creatorLukic, D.
dc.creatorSavin, D. W.
dc.date2007-09-10
dc.date.accessioned2026-07-07T08:33:04Z
dc.date.available2026-07-07T08:33:04Z
dc.descriptionThe electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic recombination (DR) resonances associated with 3s to nl core excitations, 2s 2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations, and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l' (n'=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.
dc.description13 pages, 9 figures, 3 tables. Accepted for publication in Physical Review A
dc.identifierhttps://arxiv.org/abs/0709.1363
dc.identifierhttp://arxiv.org/abs/0709.1363
dc.identifierE. W. Schmidt et al., Phys. Rev. A 76, 032717 (2007)
dc.identifierdoi:10.1103/PhysRevA.76.032717
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/138997
dc.subjectAtomic Physics
dc.subjectAstrophysics
dc.titleElectron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations
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