Nanoscale field effect transistor for biomolecular signal amplification

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dc.creatorChen, Yu
dc.creatorWang, Xihua
dc.creatorHong, Mi K.
dc.creatorErramilli, Shyamsunder
dc.creatorRosenberg, Carol
dc.creatorMohanty, Pritiraj
dc.date2008-02-13
dc.date.accessioned2026-07-07T09:20:27Z
dc.date.available2026-07-07T09:20:27Z
dc.descriptionWe report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of the differential conductance of the nanowire channels in the FET allows sensitive detection of changes in the surface potential due to biomolecular binding. Narrower silicon channels demonstrate higher sensitivity to binding due to increased surface-to-volume ratio. The operation of the device in the negative source-drain region demonstrates signal amplification. The equivalence between protein binding and change in the surface potential is described.
dc.description4 pages, 3 figures, two-column format. Related papers can be found at http://nano.bu.edu
dc.identifierhttps://arxiv.org/abs/0802.1756
dc.identifierhttp://arxiv.org/abs/0802.1756
dc.identifierAPPLIED PHYSICS LETTERS 91, 243511 (2007)
dc.identifierdoi:10.1063/1.2822445
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/154726
dc.subjectBiological Physics
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.subjectChemical Physics
dc.titleNanoscale field effect transistor for biomolecular signal amplification
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