Excitons with anisotropic effective mass

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dc.creatorSchindlmayr, Arno
dc.date1997-09-25
dc.date.accessioned2026-07-07T09:16:23Z
dc.date.available2026-07-07T09:16:23Z
dc.descriptionWe present a simple analytic scheme for calculating the binding energy of excitons in semiconductors that takes full account of the existing anisotropy in the effective mass, as a complement to the qualitative treatment in most textbooks. Results obtained for excitons in gallium nitride form the basis for a discussion of the accuracy of this approach.
dc.description3 pages, RevTeX
dc.identifierhttps://arxiv.org/abs/physics/9709036
dc.identifierhttp://arxiv.org/abs/physics/9709036
dc.identifierEur. J. Phys. 18, 374 (1997).
dc.identifierdoi:10.1088/0143-0807/18/5/011
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/153336
dc.subjectPhysics Education
dc.subjectMaterials Science
dc.titleExcitons with anisotropic effective mass
dc.typetext

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