Selective epitaxial growth of sub-micron complex oxide structures by amorphous SrTiO3

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dc.creatorMorales, P.
dc.creatorDiCiano, M.
dc.creatorWei, J. Y. T.
dc.date2005-06-01
dc.date.accessioned2026-07-07T03:05:26Z
dc.date.available2026-07-07T03:05:26Z
dc.descriptionA chemical-free technique for fabricating submicron complex oxide structures has been developed based on selective epitaxial growth. The crystallinity and hence the conductivity of the complex oxide is inhibited by amorphous SrTiO3 (STO). Using a combination of pulsed laser deposition and electron-beam lithography, amorphous STO barriers are first deposited on a single crystal substrate. A thin film is then deposited on the patterned substrate with the amorphous STO barriers acting to electrically and physically isolate different regions of the film. Since no chemical or physical etchants come in contact with the deposited film, its integrity and stability are preserved. This technique has successfully produced sub-micron YBCO and LCMO structures.
dc.description4 pages, 3 figures. Published Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/cond-mat/0506001
dc.identifierhttp://arxiv.org/abs/cond-mat/0506001
dc.identifierP. Morales, M. DiCiano and J.Y.T. Wei, Appl. Phys. Lett. 86, 192509 (2005)
dc.identifierdoi:10.1063/1.1925781
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26446
dc.subjectSuperconductivity
dc.titleSelective epitaxial growth of sub-micron complex oxide structures by amorphous SrTiO3
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