Ion beam sputtering method for progressive reduction of nanostructures dimensions

Simple item page
dc.creatorSavolainen, M.
dc.creatorTouboltsev, V.
dc.creatorKoppinen, P.
dc.creatorRiikonen, K. -P.
dc.creatorArutyunov, K.
dc.date2003-11-17
dc.date2003-11-21
dc.date.accessioned2026-07-07T13:00:54Z
dc.date.available2026-07-07T13:00:54Z
dc.descriptionAn ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET). The method is based on removal of material from the structures when exposed to energetic argon ions and it was shown to be applicable multiple times to the same sample. The electrical measurements and samples imaging in between the sputtering sessions clearly indicated that the dimensions, i.e. cross-section of the nanowires and area of the tunnel junctions in SET, were progressively reduced without noticeable degradation of the sample structure. We were able to reduce the effective diameter of aluminum nanowires from ~65 nm down to ~30 nm, whereas the tunnel junction area has been reduced by 40 %.
dc.identifierhttps://arxiv.org/abs/cond-mat/0311383
dc.identifierhttp://arxiv.org/abs/cond-mat/0311383
dc.identifierAppl. Phys. A 79, 1769--1773 (2004)
dc.identifierdoi:10.1007/s00339-004-2709-8
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/225987
dc.subjectSuperconductivity
dc.subjectMesoscale and Nanoscale Physics
dc.titleIon beam sputtering method for progressive reduction of nanostructures dimensions
dc.typetext

Files

Collections

arXiv