Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective

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dc.creatorAguiar, M. C. O.
dc.creatorDobrosavljevic, V.
dc.creatorAbrahams, E.
dc.creatorKotliar, G.
dc.date2008-11-27
dc.date2009-03-24
dc.date.accessioned2026-07-07T13:04:06Z
dc.date.available2026-07-07T13:04:06Z
dc.descriptionWe present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of Typical-Medium Theory (TMT-DMFT) - the simplest extension of dynamical mean field theory (DMFT) capable of incorporating Anderson localization effects. By making use of previous scaling studies of Anderson impurity models close to the metal-insulator transition, we solve this problem analytically and reveal the dependence of the critical behavior on the particle-hole symmetry. Our main result is that, for sufficiently strong disorder, the Mott-Anderson transition is characterized by a precisely defined two-fluid behavior, in which only a fraction of the electrons undergo a "site selective" Mott localization; the rest become Anderson-localized quasiparticles.
dc.description4+ pages, 4 figures, v2: minor changes, accepted for publication in Phys. Rev. Lett
dc.identifierhttps://arxiv.org/abs/0811.4612
dc.identifierhttp://arxiv.org/abs/0811.4612
dc.identifierPhys. Rev. Lett. 102, 156402 (2009)
dc.identifierdoi:10.1103/PhysRevLett.102.156402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/227040
dc.subjectStrongly Correlated Electrons
dc.titleCritical behavior at Mott-Anderson transition: a TMT-DMFT perspective
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