Etching-dependent reproducible memory switching in vertical SiO2 structures

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dc.creatorYao, J.
dc.creatorZhong, L.
dc.creatorNatelson, D.
dc.creatorTour, J. M.
dc.date2008-11-25
dc.date.accessioned2026-07-07T13:16:39Z
dc.date.available2026-07-07T13:16:39Z
dc.descriptionVertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 $μ$s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 10$^{4}$ were demonstrated.
dc.description6 pages, 3 figures + 2 suppl. figures
dc.identifierhttps://arxiv.org/abs/0811.4099
dc.identifierhttp://arxiv.org/abs/0811.4099
dc.identifierAppl. Phys. Lett. 93, 253101 (2009)
dc.identifierdoi:10.1063/1.3045951
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230860
dc.subjectMaterials Science
dc.titleEtching-dependent reproducible memory switching in vertical SiO2 structures
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