Photoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation

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dc.creatorMuseur, Luc
dc.creatorAnglos, Demetrios
dc.creatorPetitet, Jean-Pierre
dc.creatorMichel, Jean Pierre
dc.creatorKanaev, Andrei V.
dc.date2008-04-04
dc.date.accessioned2026-07-07T09:30:31Z
dc.date.available2026-07-07T09:30:31Z
dc.descriptionWe report on the UV laser induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation of the surface under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence bands are tentatively ascribed to impurity and mono (VN), or multiple (m-VN with m = 2 or 3) nitrogen vacancies. A structured fluorescence band between 300 nm and 350 nm is assigned to impurity-band transition and its complex lineshape is attributed to phonon replicas. An additional band at 340 nm, assigned to VN vacancies on surface, is observed under vacuum and quenched by adsorbed molecular oxygen. UV-irradiation of h-BN under vacuum results in a broad asymmetric fluorescence at ~400 nm assigned to m-VN vacancies; further irradiation breaks more B-N bonds enriching the surface with elemental boron. However, no boron deposit appears under irradiation of samples in ambient atmosphere. This effect is explained by oxygen healing of radiation-induced surface defects. Formation of the oxide layer prevents B-N dissociation and preserves the bulk sample stoichiometry.
dc.identifierhttps://arxiv.org/abs/0804.0764
dc.identifierhttp://arxiv.org/abs/0804.0764
dc.identifierJournal of luminescence 127, 595 (2007)
dc.identifierdoi:10.1016/j.jlumin.2007.01.024
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158146
dc.subjectOptics
dc.titlePhotoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation
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