Structural, electronic and magnetic properties of Mn-doped GaAs(110) surface

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dc.creatorStroppa, A.
dc.date2006-10-11
dc.date.accessioned2026-07-07T07:27:27Z
dc.date.available2026-07-07T07:27:27Z
dc.descriptionFirst principles total-energy pseudopotential calculations have been performed to investigate STM images of the (110) cross-sectional surface of Mn-doped GaAs. We have considered configurations with Mn in interstitial positions in the uppermost surface layers with Mn surrounded by As (Int$_{As}$) or Ga (Int$_{Ga}$) atoms. The introduction of Mn on the GaAs(110) surface results in a strong local distortions in the underlying crystal lattice, with variations of interatomic distances up to 3% with respect to unrelaxed ones. In both cases, the surface electronic structure is half-metallic (or \emph{nearly} half metallic) and it strongly depends on the local Mn environment. The nearby Mn atoms show an induced spin-polarization resulting in a ferromagnetic Mn--As and antiferromagnetic Mn--Ga configuration. The simulation of the STM images show very different pattern of the imaged Mn atom, suggesting that they could be easily discerned by STM analysis.
dc.descriptionTypos corrected
dc.identifierhttps://arxiv.org/abs/cond-mat/0610292
dc.identifierhttp://arxiv.org/abs/cond-mat/0610292
dc.identifierNuovo Cimento C, Volume 029 Issue 03 pp 315-324 (2006)
dc.identifierdoi:10.1393/ncc/i2005-10235-9
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/117382
dc.subjectMaterials Science
dc.titleStructural, electronic and magnetic properties of Mn-doped GaAs(110) surface
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