Vortex state microwave resistivity in Tl-2212 thin films

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dc.creatorPompeo, N.
dc.creatorSarti, S.
dc.creatorMarcon, R.
dc.creatorSchneidewind, H.
dc.creatorSilva, E.
dc.date2006-07-21
dc.date.accessioned2026-07-07T07:16:07Z
dc.date.available2026-07-07T07:16:07Z
dc.descriptionWe present measurements of the field induced changes in the 47 GHz complex resistivity, $Δ\tilde ρ(H,T)$, in Tl$_{2}$Ba$_{2}$CaCu$_{2}$O$_{8+x}$ (TBCCO) thin films with $T_{c}\simeq$ 105 K, prepared on CeO$_{2}$ buffered sapphire substrates. At low fields ($μ_{0}H<$10 mT) a very small irreversible feature is present, suggesting a little role of intergranular phenomena. Above that level $Δ\tilde ρ(H,T)$ exhibits a superlinear dependence with the field, as opposed to the expected (at high frequencies) quasilinear behaviour. We observe a crossover between predominantly imaginary to predominantly real (dissipative) response with increasing temperature and/or field. In addition, we find the clear scaling property $Δ\tilde ρ(H,T)=Δ\tilde ρ[H/H^{*}(T)]$, where the scaling field $H^{*}(T)$ maps closely the melting field measured in single crystals. We discuss our microwave results in terms of loss of flux lines rigidity.
dc.description8 pages, 3 figures, proceedings of 9th HTSHFF, accepted for publication on J. Supercond
dc.identifierhttps://arxiv.org/abs/cond-mat/0607552
dc.identifierhttp://arxiv.org/abs/cond-mat/0607552
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/113467
dc.subjectSuperconductivity
dc.titleVortex state microwave resistivity in Tl-2212 thin films
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