Nonlinear charge injection in organic field-effect transistors

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dc.creatorHamadani, B. H.
dc.creatorNatelson, D.
dc.date2004-10-11
dc.date.accessioned2026-07-07T03:01:24Z
dc.date.available2026-07-07T03:01:24Z
dc.descriptionTransport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting contacts are extracted from the dependence of conductance on channel length. With reasonable parameters, a model of hopping injection into a disordered density of localized states, with emphasis on the primary injection event, agrees well with the field and the temperature dependence of the data over a broad range of temperatures and gate voltages.
dc.description7 pages, 7 figures, sub. to J. Appl. Phys
dc.identifierhttps://arxiv.org/abs/cond-mat/0410262
dc.identifierhttp://arxiv.org/abs/cond-mat/0410262
dc.identifierJ. Appl. Phys. 97, 064508 (2005).
dc.identifierdoi:10.1063/1.1858874
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25043
dc.subjectDisordered Systems and Neural Networks
dc.subjectMaterials Science
dc.titleNonlinear charge injection in organic field-effect transistors
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