Boltzmann transport and residual conductivity in bilayer graphene

dc.creatorAdam, Shaffique
dc.creatorSarma, S. Das
dc.date2007-10-31
dc.date2008-03-21
dc.date.accessioned2026-07-07T09:27:35Z
dc.date.available2026-07-07T09:27:35Z
dc.descriptionA Drude-Boltzmann theory is used to calculate the transport properties of bilayer graphene. We find that for typical carrier densities accessible in graphene experiments, the dominant scattering mechanism is overscreened Coulomb impurities that behave like short-range scatterers. We anticipate that the conductivity $σ(n)$ is linear in $n$ at high density and has a plateau at low density corresponding to a residual density of $n^* = \sqrt{n_{\rm imp} {\tilde n}}$, where ${\tilde n}$ is a constant which we estimate using a self-consistent Thomas-Fermi screening approximation to be ${\tilde n} \approx 0.01 ~q_{\rm TF}^2 \approx 140 \times 10^{10} {\rm cm}^{-2}$. Analytic results are derived for the conductivity as a function of the charged impurity density. We also comment on the temperature dependence of the bilayer conductivity.
dc.identifierhttps://arxiv.org/abs/0711.0003
dc.identifierhttp://arxiv.org/abs/0711.0003
dc.identifierPhys. Rev. B 77, 115436 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.115436
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157153
dc.subjectMesoscale and Nanoscale Physics
dc.titleBoltzmann transport and residual conductivity in bilayer graphene
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