Large Transport Properties of Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ Single Crystals Grown by a Floating-Zone Method

dc.creatorFujii, Takenori
dc.creatorTerasaki, Ichiro
dc.date2003-01-21
dc.date.accessioned2026-07-07T02:49:16Z
dc.date.available2026-07-07T02:49:16Z
dc.descriptionA parent insulator of the Bi-based high-$T_c$ superconductor Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ was successfully grown by a traveling solvent floating zone method. The in-plane resistivity $ρ_{ab}$ shows metallic behavior ($dρ_{ab}/dT >$ 0) near room temperature, although the magnitude of the resistivity is far above the Mott limit for metallic conduction. The Hall mobility of the parent insulator does not so much differ from that of an optimally doped sample. These results suggest that the system is not a simple insulator with a well-defined gap, and the hole in the parent insulator is essentially itinerant, as soon as it is doped.
dc.description4 pages, 4 figures, Proceedings of ISS2002, Physica C (in press)
dc.identifierhttps://arxiv.org/abs/cond-mat/0301370
dc.identifierhttp://arxiv.org/abs/cond-mat/0301370
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20726
dc.subjectStrongly Correlated Electrons
dc.subjectSuperconductivity
dc.titleLarge Transport Properties of Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ Single Crystals Grown by a Floating-Zone Method
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